Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

no code implementations • 16 Dec 2020 • Patrick Fiorenza, Corrado Bongiorno, Filippo Giannazzo, Santi Alessandrino, Angelo Messina, Mario Saggio, Fabrizio Roccaforte

In this paper, SiO2 layers deposited on 4H-SiC and subjected to different post deposition annealing (PDA) in NO and N2O were studied to identify the key factors influencing the channel mobility and threshold voltage stability in 4H-SiC MOSFETs.

Band Gap Materials Science

Inter-diffusion, melting and reaction interplay in Ni/4H-SiC under excimer laser annealing

no code implementations • 10 Nov 2020 • Salvatore Sanzaro, Corrado Bongiorno, Paolo Badalà, Anna Bassi, Giovanni Franco, Patrizia Vasquez, Alessandra Alberti, Antonino La Magna

We investigated the complex interaction between a nickel layer and a 4H-SiC substrate under UV-laser irradiation since the early stages of the atomic inter-diffusion.

Applied Physics Materials Science